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| FDFS2P103 September 2001 FDFS2P103 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description The FDFS2P103 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features * -5.3 A, -30V RDS(ON) = 59 m @ VGS = -10 V RDS(ON) = 92 m @ VGS = -4.5 V * VF < 0.52 V @ 1 A (TJ = 125C) VF < 0.57 V @ 1 A (TJ = 25C) * Schottky and MOSFET incorporated into single power surface mount SO-8 package * Electrically independent Schottky and MOSFET pinout for design flexibility D D C C A1 A2 S3 G S A 8C 7C 6D 5D SO-8 Pin 1 G4 A TA=25oC unless otherwise noted Absolute Maximum Ratings Symbol VDSS VGSS ID PD MOSFET Drain-Source Voltage MOSFET Gate-Source Voltage Drain Current - Continuous - Pulsed Parameter (Note 1a) Ratings -30 25 -5.3 -20 2 1.6 1 0.9 Units V V A W Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG VRRM IO Operating and Storage Junction Temperature Range Schottky Repetitive Peak Reverse Voltage Schottky Average Forward Current (Note 1a) -55 to +150 30 1 C V A Package Marking and Ordering Information Device Marking FDFS2P103 Device FDFS2P103 Reel Size 13'' Tape width 12mm Quantity 2500 units 2001 Fairchild Semiconductor Corporation FDFS2P103 Rev C(W) FDFS2P103 Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSSF IGSSR TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) Test Conditions ID = -250 A VGS = 0 V, ID = -250 A,Referenced to 25C VDS = -24 V, VGS = 25 V, VGS = -25 V, VGS = 0 V VDS = 0 V VDS = 0 V Min -30 Typ Max Units V Off Characteristics -23 -1 100 -100 mV/C A nA nA On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance ID = -250 A VDS = VGS, ID = -250 A,Referenced to 25C VGS = -10 V, ID = -5.3 A VGS = -4.5 V, ID = -4 A VGS=-10 V, ID =-5.3A, TJ=125C VGS = -10 V, VDS = -5V, VDS = -5 V ID = -5.3 A -1 -1.7 4.5 46 70 63 -3 V mV/C 59 92 88 m ID(on) gFS -20 10 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = -15 V, f = 1.0 MHz VGS = 0 V, 528 132 70 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -15 V, VGS = -10 V, ID = -1 A, RGEN = 6 7 13 14 9 14 24 25 17 8 ns ns ns ns nC nC nC VDS = -15 V, VGS = -5 V ID = -5.3 A, 5.3 2.2 1.6 Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = -1.3 A Voltage Reverse Leakage Forward Voltage VR = 30 V IF = 1A (Note 2) -0.7 -1.3 -1.2 A V Schottky Diode Characteristics IR VF TJ = 25C TJ = 125C TJ = 25C TJ = 125C 15 6 0.41 0.32 100 30 0.57 0.52 A mA V V FDFS2P103 Rev C(W) FDFS2P103 Thermal Characteristics RJA RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1c) (Note 1) 78 135 40 C/W C/W C/W Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 78C/W when mounted on a 0.5in2 pad of 2 oz copper b) 125C/W when mounted on a 0.02 in2 pad of 2 oz copper c) 135C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDFS2P103 Rev C(W) FDFS2P103 Typical Characteristics 30 2 -5.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -10V -ID, DRAIN CURRENT (A) -6.0V 1.8 VGS=-4.0V 1.6 -4.5V 1.4 1.2 1 0.8 -5.0V -6.0V -7.0V -8.0V -10V 20 -4.5V -4.0V 10 -3.5V -3.0V 0 0 1 2 3 4 5 6 -VDS, DRAIN TO SOURCE VOLTAGE (V) 0 6 12 18 24 30 -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.25 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = -5.3A VGS = -10V ID = -2.8A 0.2 1.4 1.2 0.15 TA = 125oC 0.1 1 TA = 25oC 0.05 0.8 0.6 -50 -25 0 25 50 75 100 o 0 125 150 175 2 4 6 8 10 TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 15 -IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VDS = -5V -ID, DRAIN CURRENT (A) 12 TA = -55oC 125oC 25oC 10 VGS =0 V TA = 125oC 1 9 25oC 0.1 6 -55oC 0.01 3 0.001 0 1 1.5 2 2.5 3 3.5 4 4.5 -VGS, GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDFS2P103 Rev C(W) FDFS2P103 Typical Characteristics 10 -VGS, GATE-SOURCE VOLTAGE (V) ID = -5.3A 8 VDS = -10V -15V 800 700 f = 1 MHz VGS = 0 V CISS CAPACITANCE (pF) -20V 600 500 400 300 6 4 COSS 200 100 2 0 0 2 4 6 8 10 Qg, GATE CHARGE (nC) CRSS 0 0 5 10 15 20 25 30 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. IR, REVERSE LEAKAGE CURRENT (A) 10 IF, FORWARD LEAKAGE CURRENT (A) Figure 8. Capacitance Characteristics. 1.00E-01 1.00E-02 1.00E-03 1.00E-04 1.00E-05 1.00E-06 1.00E-07 TJ = 125oC TJ = 125oC 1 0.1 TJ = 25oC TJ = 25oC 0.01 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 VF, FORWARD VOLTAGE (V) 0 10 20 30 40 50 60 VR, REVERSE VOLTAGE (V) Figure 9. Schottky Diode Forward Voltage. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 Figure 10. Schottky Diode Reverse Current. R JA (t) = r(t) * R JA R JA = 135 C/W P(pk) 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE t1 t2 T J - T A = P * R JA (t) Duty Cycle, D = t 1 / t 2 0.01 0.001 0.01 0.1 1 t 1 , TIM E (sec) 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDFS2P103 Rev C(W) SOIC-8 Tape and Reel Data SOIC(8lds) Packaging Configuration: Figure 1.0 ATTENTION OBSER PRECAUTIONS VE FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES N NT IO NS AT TERVE PR ECAUTIO OBSE HAND FOR TATIC TROS ELEC ITIVE SENS ES DEVIC LING Packaging Description: SOIC-8 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 2,500 units per 13" or 330cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 500 units per 7" or 177cm diameter reel. This and some other options are further described in the Packaging Information table. These full reels are individually barcode labeled and placed inside a standard intermediate box (illustrated in figure 1.0) made of recyclable corrugated brown paper. One box contains two reels maximum. And these boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped. Embossed ESD Marking Antistatic Cover Tape Static Dissipative Embossed Carrier Tape F63TNR Label Customized Label F852 NDS 9959 F852 NDS 9959 F852 NDS 9959 F852 NDS 9959 SOIC (8lds) Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit(gm) Weight per Reel (kg) Note/Comments Standard (no flow code) TNR 2,500 13" Dia 355x333x40 5,000 0.0774 0.6060 L86Z Rail/Tube 95 530x130x83 30,000 0.0774 F011 TNR 4,000 13" Dia 355x333x40 8,000 0.0774 0.9696 D84Z TNR 500 7" Dia 193x183x80 2,000 0.0774 0.1182 F852 NDS 9959 Pin 1 SOIC-8 Unit Orientation Barcode Label Barcode Label Barcode Label 355mm x 333mm x 40mm Intermediate container for 13" reel option Barcode Label sample 193mm x 183mm x 80mm Pizza Box for Standard Option SOIC(8lds)Tape Leader and Trailer Configuration: Figure 2.0 CBVK741B019 FDS9953A FSID: FDS9953A LOT: CBVK741B019 3000 QTY: 2500 SPEC: (F63T NR) D/C1: Z9842AB QTY1: SPEC REV: D/C2: QTY2: CPN: FAIRCHILD SEMICONDUCTOR CORPORATION Carrier Tape Cover Tape Components Tr ailer Ta pe 640mm minimum or 80 empty pockets Leader Tape 1680mm minimum or 210 empty pockets (c)2001 Fairchild Semiconductor Corporation June 2001, Rev. C1 SOIC-8 Tape and Reel Data, continued SOIC(8lds) Embossed Carrier Tape Configuration: Figure 3.0 T E1 P0 D0 F K0 Wc B0 E2 W Tc A0 P1 D1 User Direction of Feed Dimensions are in millimeter Pkg type SOIC(8lds) (12mm) A0 5.30 +/-0.10 B0 6.50 +/-0.10 W 12.0 +/-0.3 D0 1.55 +/-0.05 D1 1.60 +/-0.10 E1 1.75 +/-0.10 E2 10.25 min F 5.50 +/-0.05 P1 8.0 +/-0.1 P0 4.0 +/-0.1 K0 2.1 +/-0.10 T 0.450 +/0.150 Wc 9.2 +/-0.3 Tc 0.06 +/-0.02 Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). 20 deg maximum Typical component cavity center line 0.5mm maximum B0 20 deg maximum component rotation 0.5mm maximum Sketch A (Side or Front Sectional View) Component Rotation A0 Sketch B (Top View) Typical component center line Sketch C (Top View) Component lateral movement SOIC(8lds) Reel Configuration: Figure 4.0 Component Rotation W1 Measured at Hub Dim A Max Dim A max Dim N See detail AA 7" Diameter Option B Min Dim C See detail AA W3 Dim D min 13" Diameter Option W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Tape Size 12mm Reel Option 7" Dia Dim A 7.00 177.8 13.00 330 Dim B 0.059 1.5 0.059 1.5 Dim C 512 +0.020/-0.008 13 +0.5/-0.2 512 +0.020/-0.008 13 +0.5/-0.2 Dim D 0.795 20.2 0.795 20.2 Dim N 2.165 55 7.00 178 Dim W1 0.488 +0.078/-0.000 12.4 +2/0 0.488 +0.078/-0.000 12.4 +2/0 Dim W2 0.724 18.4 0.724 18.4 Dim W3 (LSL-USL) 0.469 - 0.606 11.9 - 15.4 0.469 - 0.606 11.9 - 15.4 12mm 13" Dia a 1998 Fairchild Semiconductor Corporation January 2001, Rev. C SOIC-8 Package Dimensions SOIC-8 (FS PKG Code S1) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0774 9 (c)2000 Fairchild Semiconductor International September 1998, Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM DISCLAIMER FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R) SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R) VCXTM STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4 |
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